This article reviews the development of SiC and GaN devices for power-switching
applications in the context of four specifically identified application requirements:(1) high …

Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …

An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O,
and NO reveals that the dominant positive effect of nitridation is due to a significant reduction …

The degraded performance of 4H-SiC transistors due to a high density of the SiC/SiO 2
interface states (D IT)(~ 10 12-10 13 eV-1 cm-2) has gained increasing attention in recent …

Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and
silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of …

This paper demonstrates how sodium enhanced oxidation of Si face 4 H‐Si C results in
removal of near-interface traps at the Si O 2∕ 4 H‐Si C interface. These detrimental traps …

Several alternative oxidation techniques are developed and tested with the aim to reduce
the high density of interface traps Dit in n‐type 4H‐SiC MOS capacitors. A lamp furnace in …

Besides its favorable physical properties, high performant MOSFETs (metal-oxide–
semiconductor field-effect transistors) fabrication in silicon carbide (SiC) remains an open …

A systematic electrical and physical characterization of gate oxides on 4H-SiC, grown in
diluted N 2 O at 1300° C, has been performed. Electrical characterization by the high …

The key stages of the dry oxidation of the SiC (0001) surface are analyzed based on first-
principles calculations. It is found that an abrupt SiC/SiO 2 interface model results in a large …