Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineering
This work presents the resistive switching characteristics of the TaO x-based conductive-
bridge random-access memory (CBRAM) for neuromorphic engineering. Controlling the Cu …
bridge random-access memory (CBRAM) for neuromorphic engineering. Controlling the Cu …
Design and Performance Analysis of Modern Computational Storage Devices: A Systematic Review
SA Shirke - Expert Systems with Applications, 2024 - Elsevier
Abstract Computational Storage Devices (CSDs), also known as In-Storage Compute or In-
Suit Processing, offer higher computing power than traditional storage devices (SD). The …
Suit Processing, offer higher computing power than traditional storage devices (SD). The …
Towards a universal model of dielectric breakdown
We present a microscopic breakdown (BD) model in which chemical bonds are weakened
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …
Polarization Switching and Charge Trapping in HfO2-based Ferroelectric Transistors
In this study, we provide an insight into the polarization switching behavior of HfO2-based
ferroelectric field-effect transistors (FeFETs) by utilizing the Landau-Ginzburg-Devonshire …
ferroelectric field-effect transistors (FeFETs) by utilizing the Landau-Ginzburg-Devonshire …
Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors
B Bcltrando, B Coppolelli, JB Kim… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this work we develop an ALD grown IGZO channel material and integrate it into a double-
gated transistor test vehicle. We analyze physical mechanism and device reliability …
gated transistor test vehicle. We analyze physical mechanism and device reliability …
In-Memory Computing Using FLASH Memory
Y Halawani, B Mohammad - In-Memory Computing Hardware Accelerators …, 2023 - Springer
FLASH is a type of electrically erasable read-only memory (EEPROM), where the program
code is usually stored. It requires high programming voltages at the control gate in order to …
code is usually stored. It requires high programming voltages at the control gate in order to …
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
D Cornigli, H Schlichting, T Becker, L Larcher… - Solid State …, 2024 - Trans Tech Publ
In this study we analyzed the physical mechanisms governing time-dependent dielectric
breakdown (TDDB) and we used TDDB physical model of dielectric breakdown …
breakdown (TDDB) and we used TDDB physical model of dielectric breakdown …
Data Variability Study of Advanced 3D NAND Memory using Python
M Agam, HT Mebrahtu, H Dey - 2024 35th Annual SEMI …, 2024 - ieeexplore.ieee.org
The methodology for data analysis with large variability based on Python is discussed and
demonstrated. As NAND memory transitioned from 2D to 3D, a significant new source of …
demonstrated. As NAND memory transitioned from 2D to 3D, a significant new source of …
Defects in Polysilicon Channel: Insight from First Principles and Multi-Scale Modelling
With increasing demand of essential components in the field of electronic devices, enabling
advancements in display technology, flexible electronics, low-power devices, and various …
advancements in display technology, flexible electronics, low-power devices, and various …