Tungsten nitride (WNx) thin films were deposited on Si (100) substrates using direct current
reactive magnetron sputtering in discharging a mixture of N2 and Ar gas. The effects of …

Abstract Tungsten nitride layers, 1.45-μm-thick, were deposited by reactive magnetron
sputtering on MgO (001), MgO (111), and Al 2 O 3 (0001) in 20 mTorr N 2 at T s= 500–800° …

The structure, hardness, friction and wear of tungsten nitrides prepared by dc reactive
magnetron sputtering were investigated. The coatings were deposited with different nitrogen …

Tungsten nitride (WN x) thin films were synthesized on the silicon substrates by way of Gas
Injection Magnetron Sputtering (GIMS) technique. Pulsed discharge conditions, generated in …

Tungsten nitride (WN x) thin films were produced by reactive dc magnetron sputtering of
tungsten in an Ar–N 2 gas mixture. The influence of the deposition power on the properties …

Cr/CrN nano-multilayers were grown on H13 steel and silicon (100), having different periods
(Λ), at room temperature using the unbalanced magnetron sputtering technique by varying …

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates
using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The …

The review is concerned with analysis of the results of modern ab initio studies on the
electronic structure, the nature of chemical bonding and some physicochemical properties of …

A thin monolayer and multilayer physical vapour deposition film was prepared on tool steel
substrates using an unbalanced magnetron sputtering technique. Characteristics of …

In this study, W and tungsten nitride films were fabricated by reactive sputtering in a N2/Ar
atmosphere, the native oxide growth on the surface of the tungsten nitride films was …