Enhancement of the optical absorption in MgZnO/ZnO quantum well under external electric field

H Dakhlaoui, M Nefzi - Optik, 2018 - Elsevier
In this study, the effects of magnesium composition and the external electric field on the
optical absorption coefficient lineshape and intersubband transitions in Mg x Zn (1-x) O/ZnO …

Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field

KA Rodríguez-Magdaleno, JC Martínez-Orozco… - Journal of …, 2014 - Elsevier
In this work, the conduction band electron states and the associated intersubband-related
linear and nonlinear optical absorption coefficient and relative refractive index change are …

Interband transitions and exciton binding energy in a Razavy quantum well: effects of external fields and Razavy potential parameters

M Sayrac, AJ Peter, F Ungan - The European Physical Journal Plus, 2022 - Springer
In this paper, we theoretically investigated the influence of externally applied fields such as
high-frequency non-resonant intense laser fields, static electric and magnetic fields, as well …

Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

H Dakhlaoui, S Almansour, E Algrafy - Superlattices and Microstructures, 2015 - Elsevier
In this paper, the effects of hydrostatic pressure, the position and the concentration of Si δ-
doped layer on the intersubband transitions and absorption lineshape in GaAs quantum well …

Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields

H Dakhlaoui, JA Gil-Corrales, AL Morales… - Journal of …, 2022 - Springer
We investigate the energy states of confined electrons in doped quantum structures with
Razavy-like confining potentials. The theoretical investigation is performed within the …

Theoretical simulation of optical absorption coefficients in heterostructure based on semi-parabolic-double quantum wells

H Dakhlaoui, AS Durmuslar… - The European Physical …, 2022 - Springer
In this work, we have performed a numerical calculation to obtain the lowest three electron
subband energy levels and their density of probabilities in a n-doped heterostructure …

The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer

E Ozturk, I Sokmen - Solid state communications, 2003 - Elsevier
The intersubband transitions in Si δ-doped GaAs structures is theoretically investigated for
different applied electric fields. For an uniform distribution the electronic structure has been …

Self-consistent analysis of Si δ-doped layer placed in a non-central position in GaAs structure

J Osvald - Physica E: Low-dimensional Systems and …, 2004 - Elsevier
We have theoretically studied the influence of a position of a δ-doped layer relative to the
semiconductor surface on its electronic structure and a free charge carrier profile. The …

Optical intersubband transitions in double Si δ-doped GaAs under an applied magnetic field

E Ozturk - Superlattices and Microstructures, 2009 - Elsevier
For different applied magnetic fields, the intersubband transitions of double Si δ-doped
GaAs structures is theoretically investigated for a uniform donor distribution. The electronic …

Donor impurity atom effect on the inter-subband absorption coefficient for symmetric double n-type δ-doped GaAs quantum well

KA Rodríguez-Magdaleno, A Turkoglu, F Ungan… - Superlattices and …, 2021 - Elsevier
In this work, the electronic structure and the inter-subband absorption coefficient (IAC) are
theoretically studied for symmetric double n-type δ-doped GaAs quantum well considering …