[HTML][HTML] Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection
M Wanitzek, M Hack, D Schwarz, J Schulze… - Materials Science in …, 2024 - Elsevier
Avalanche photodiodes utilizing GeSn as an absorbing material can be used for low-light
detection of telecommunication wavelengths, such as 1550 nm. We present the performance …
detection of telecommunication wavelengths, such as 1550 nm. We present the performance …
Modeling and design of GeSn avalanche photodiodes with high tin content for applications at 3.3 μm
L Finazzi, R Giani, O Concepción… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
We propose and compare two back-side illuminated GeSn avalanche photodiode (APD)
mesa structures with 15% tin content operating at photon wavelengths up to 3.3 μm, suitable …
mesa structures with 15% tin content operating at photon wavelengths up to 3.3 μm, suitable …