Silicon millimeter-wave, terahertz, and high-speed fiber-optic device and benchmark circuit scaling through the 2030 ITRS horizon

SP Voinigescu, S Shopov, J Bateman… - Proceedings of the …, 2017 - ieeexplore.ieee.org
This paper reviews the technology requirements of future 100-300-GHz millimeter-wave
(mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as …

Millimeter-wave and terahertz transceivers in SiGe BiCMOS technologies

D Kissinger, G Kahmen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

A 219-to-231 GHz frequency-multiplier-based VCO with~ 3% peak DC-to-RF efficiency in 65-nm CMOS

A Nikpaik, AHM Shirazi, A Nabavi… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
Signal sources at mm-wave and (sub-) terahertz frequencies in CMOS can be classified into
two broad categories: harmonic oscillators and oscillators that are based on the frequency …

220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology

A Ali, J Yun, M Kucharski, HJ Ng… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article presents two broadband frequency multiplier chains (FMCs) fabricated with a
standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push …

A 205–273-GHz frequency multiplier chain (× 6) with 9-dBm output power and 1.92% DC-to-RF efficiency in 0.13-µm SiGe BiCMOS

Z Li, J Chen, D Tang, R Zhou… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a 205–273-GHz wideband frequency multiplier chain (FMC) in a 0.13-
SiGe BiCMOS technology with/500 GHz. The proposed FMC consists of a-band input …

Wideband and efficient 256-GHz subharmonic-based FMCW radar transceiver in 130-nm SiGe BiCMOS technology

R Hasan, MH Eissa, WA Ahmad, HJ Ng… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article proposes a fully integrated single-channel bistatic frequency-modulated
continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 …

A 300-GHz transmitter front end with− 4.1-dBm peak output power for sub-THz communication using 130-nm SiGe BiCMOS technology

J Yu, J Chen, P Zhou, Z Li, H Li, P Yan… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
This article presents a compact 300-GHz transmitter front end manufactured in a 130-nm
SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier multiplier chain …

A wideband SiGe BiCMOS frequency doubler with 6.5-dBm peak output power for millimeter-wave signal sources

K Wu, S Muralidharan, MM Hella - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper presents a balanced frequency doubler with 6.5-dBm peak output power at 204
GHz in 130-nm SiGe BiCMOS technology (f T/f max= 210/250 GHz). To convert the single …

0.3-THz SiGe-based high-efficiency push–push VCOs with> 1-mW peak output power employing common-mode impedance enhancement

F Ahmed, M Furqan, B Heinemann… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
We present a novel method of maximizing the output power and efficiency of millimeter-
wave and terahertz signal sources, which are based on the push-push topology. In this …

A 190-GHz VCO with 20.7% tuning range employing an active mode switching block in a 130 nm SiGe BiCMOS

R Kananizadeh, O Momeni - IEEE Journal of Solid-State …, 2017 - ieeexplore.ieee.org
A voltage controlled oscillator (VCO) incorporating a system of coupled oscillators with two
active mode switching (AMS) blocks is presented. The AMS blocks excite the main VCOs to …