Some embodiments include a high voltage, high frequency switching circuit. The switching
circuit may include a high voltage switching power supply that produces pulses having a …

Some embodiments include a high voltage, high frequency switching circuit. The switching
circuit may include a high voltage switching power supply that produces pulses having a …

Some embodiments may include a nanosecond pulser com prising a plurality of solid state
switches; a transformer having a stray inductance, L?, a stray capacitance, Cs, and a turn …

Some embodiments include a high voltage pulsing power supply. A high voltage pulsing
power supply may include: a high voltage pulser having an output that provides pulses with …

(57) ABSTRACT A high voltage power system is disclosed. In some embodi ments, the high
voltage power system includes a high voltage pulsing power supply; a transformer …

Various RF plasma systems are disclosed that do not require a matching network. In some
embodiments, the RF plasma system includes an energy storage capacitor; a switching …

(57) ABSTRACT A high voltage power system is disclosed. In some embodi ments, the high
voltage power system includes a high voltage pulsing power supply; a transformer …

(57) ABSTRACT A method and apparatus for biasing regions of a substrate in a plasma
assisted processing chamber are provided. Biasing of the substrate, or regions thereof …

Embodiments of this disclosure describe an electrode bias-ing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …

Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma
generator, a bias generator, and a controller. The RF plasma generator may be electri cally …