Adhesive tapes: From daily necessities to flexible smart electronics
Imprinting “sticky” features on the surfaces of common non-sticky flexible materials, such as
paper, textile, and polymeric films produces a myriad of adhesive tapes that we use in our …
paper, textile, and polymeric films produces a myriad of adhesive tapes that we use in our …
Thermal release tape assisted mechanical exfoliation of pristine TMD and the performance of the exfoliated TMD saturable absorbers for Q-switched laser generation
SI Ooi, H Ahmad - Optical Materials, 2022 - Elsevier
This research applied an enhanced material exfoliation and transfer mechanism to process
various pristine transition metal dichalcogenide (TMD) materials into a few-layer structure …
various pristine transition metal dichalcogenide (TMD) materials into a few-layer structure …
Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch
materials for through-silicon-via (TSV) applications are likely required. In this paper, we …
materials for through-silicon-via (TSV) applications are likely required. In this paper, we …
Through-silicon-via interposers with Cu-level electrical conductivity and Si-level thermal expansion based on carbon nanotube-Cu composites for microelectronic …
G Chen, R Sundaram, A Sekiguchi… - ACS Applied Nano …, 2020 - ACS Publications
Through-silicon-via (TSV) interposers using silicon and copper represent a critical element
in microelectronic packaging, as they bridge between fine-pitch inputs/outputs at the …
in microelectronic packaging, as they bridge between fine-pitch inputs/outputs at the …
An overview of carbon nanotubes based interconnects for microelectronic packaging
S Chen, B Shan, Y Yang, G Yuan… - 2017 IMAPS Nordic …, 2017 - ieeexplore.ieee.org
Owing to the great demand in more functions and miniaturization in microelectronic
packaging, the dimensions of interconnects has decreased extremely, which has resulted in …
packaging, the dimensions of interconnects has decreased extremely, which has resulted in …
Design of Cu-MWCNT based heterogeneous coaxial through silicon vias for high-speed VLSI applications
K Rajkumar, GU Reddy - Russian Microelectronics, 2022 - Springer
This paper introduces a new method to reduce the crosstalk effects in copper-multiwalled
carbon nanotube (Cu-MWCNT) based heterogeneous coaxial through-silicon vias …
carbon nanotube (Cu-MWCNT) based heterogeneous coaxial through-silicon vias …
High-temperature adaptive through-silicon via with pyrolyzed carbon via-sealing plates for packaging 3D carbon nanostructure-based devices fabricated using C …
Through-silicon via (TSV) is a key packaging technology that facilitates the 2.5 D/3D
integration of microelectromechanical system (MEMS) devices. Among various MEMS …
integration of microelectromechanical system (MEMS) devices. Among various MEMS …
Controllable and fast synthesis of bilayer graphene by chemical vapor deposition on copper foil using a cold wall reactor
Bilayer graphene is attractive for digital device applications due to the appearance of a
bandgap under application of an electrical displacement field. Controllable and fast …
bandgap under application of an electrical displacement field. Controllable and fast …
Design of MWCNT based through silicon vias with polymer liners to reduce the crosstalk effects
This paper presents a unique method to reduce the crosstalk noise, power consumption,
power delay product (PDP) and energy delay product (EDP) in coupled multi-walled carbon …
power delay product (PDP) and energy delay product (EDP) in coupled multi-walled carbon …
The demonstration of carbon nano-tubes (CNTs) as a promising high aspect ratio (> 25) through silicon vias (TSVs) material for the vertical connection in the high …
PY Lu, CM Yen, SY Chang, YJ Feng… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work
(Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~ 10-6 Ω-m, Young's modulus …
(Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~ 10-6 Ω-m, Young's modulus …