This paper reviews the status of characterization of defects in β-Ga 2 O 3 crystals grown by
edge-defined film-fed growth and hydride vapor phase epitaxy using chemical etching …

This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-
SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and …

Dislocations are major structural defects in semiconductor materials, and they have negative
impacts on the performance and reliability of electronic devices. The Burgers vector (b→) of …

To reveal dislocations in β-Ga 2 O 3 and categorize them by their Burgers vectors, we have
carried out a comprehensive dislocation characterization by synchrotron X-ray topography …

The chemical etch pitting method is a powerful technique to reveal dislocations in
semiconductor materials; however, a reliable etchant has not been established for β-Ga 2 O …

Correlations between the structural properties and nonradiative recombination (NRR)
behaviors of threading dislocations in freestanding hydride-vapor-phase-epitaxy (HVPE) …

Silicon carbide (SiC) is a wide bandgap semiconductor that is currently contributing to a
deep transformation of power electronics, because of its outstanding combination of physical …

The character of dislocations at the emission sites observed in p–n diodes on (0001) GaN by
emission microscopy under reverse biasing is investigated. The dislocation is ac-type …

We demonstrate the three-dimensional imaging of threading screw dislocations (TSDs),
threading edge dislocations (TEDs), and basal plane dislocations (BPDs) in 4H-SiC using …

Threading dislocations (TD's) in a 4H-SiC MOSFET were characterized using transmission
electron microscopy with special emphasis of their effects on leakage in ap–n junction. Two …