High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires
Under constant electric and magnetic fields, the potential profile of the honeycomb quantum
well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high …
well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high …
Theoretical research and simulation of GaAs nanowire arrays in reflection-type photon-enhanced thermionic emission solar converters
L Xie, N Yang, P Wang, Y Xu, H He, X Shen, Y Fu - Solar Energy, 2023 - Elsevier
In this paper, GaAs was used as the cathode of the photon-enhanced thermionic emission
(PETE) solar converter. Based on the one-dimensional continuity equation and boundary …
(PETE) solar converter. Based on the one-dimensional continuity equation and boundary …
Effective passivation of InGaAs nanowires for telecommunication wavelength optoelectronics
Catalyst‐free InGaAs nanowires are promising building blocks for optoelectronic devices
operating at telecommunication wavelengths. Despite progress, the applications of InGaAs …
operating at telecommunication wavelengths. Despite progress, the applications of InGaAs …
Influence of different carrier gases, temperature, and partial pressure on growth dynamics of Ge and Si nanowires
N Forrer, A Nigro, G Gadea, I Zardo - Nanomaterials, 2023 - mdpi.com
The broad and fascinating properties of nanowires and their synthesis have attracted great
attention as building blocks for functional devices at the nanoscale. Silicon and germanium …
attention as building blocks for functional devices at the nanoscale. Silicon and germanium …
Facile sulfur-assisted synthesis of GaAs nanowires/si heterojunctions for broadband self-powered photodetector
Nanowires (NWs)-based heterojunction photodetectors (PDs) have been widely applied in
the fields of remote sensing, night vision, environmental monitoring, and optical …
the fields of remote sensing, night vision, environmental monitoring, and optical …
The dependence of structural, optical and electrical properties on substrates for GaAs nanowires grown by metal organic chemical vapor deposition
D Yang, B Zhang, D Wang, H Wang, D Fang… - Physica E: Low …, 2023 - Elsevier
GaAs nanowires (NWs) play important roles in the field of low-dimensional infrared
photodetector and laser. In this work, the GaAs NWs are directly grown on Al 2 O 3, Si and …
photodetector and laser. In this work, the GaAs NWs are directly grown on Al 2 O 3, Si and …
Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications
C Lu, S Zhang, M Chen, H Chen, M Zhu, Z Zhang… - Frontiers of …, 2024 - Springer
Van der Waals epitaxy allows heterostructure formation without considering the lattice match
requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction …
requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction …
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
AGS Vilasam, S Adhikari, B Gupta… - …, 2023 - iopscience.iop.org
Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is
key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires …
key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires …
In-Situ Construction and Exciting Photocatalytic Performance of Broad-Spectrum Responsive Bio2-X/Bi2o2co3 Heterojunctions in Tetracycline Degradation
X Wang, Y Tian, R Ma, X Zheng, J Li… - Available at SSRN … - papers.ssrn.com
The wastewater polluted by antibiotics is very harmful and dangerous since these
contaminants are poisonous and cannot occur by self-degradation. Research has verified …
contaminants are poisonous and cannot occur by self-degradation. Research has verified …