Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission

YT Cheng, HW Wan, CK Cheng, CP Cheng… - Applied Physics …, 2020 - iopscience.iop.org
The capped Si expels completely the Ge dimers on top of the epi Ge (001)-2× 1 and exhibits
a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the …

Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study

YT Cheng, HW Wan, CK Cheng, CP Cheng… - Applied Physics …, 2020 - iopscience.iop.org
By using synchrotron radiation photoemission, this study investigates the room-temperature
surface electronic structure of Si 1− x Ge x (001)-2× 1 grown by molecular-beam epitaxy on …

[HTML][HTML] A Synchrotron Radiation Photoemission Study of SiGe (001)-2× 1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge …

YT Cheng, HW Wan, J Kwo, M Hong, TW Pi - Nanomaterials, 2022 - mdpi.com
Beyond the macroscopic perspective, this study microscopically investigates Si1− xGex
(001)-2× 1 samples that were grown on the epi Ge (001) and epi Si (001) substrates via …

Oxidation and hydrogenation of SiGe (0 0 1)-2× 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study

YT Cheng, HW Wan, J Kwo, M Hong, TW Pi - Applied Surface Science, 2021 - Elsevier
This study used high-resolution synchrotron radiation photoemission to investigate the epi
SiGe (0 0 1)-2× 1 surface that was exposed to atomic oxygen and hydrogen at room …

[HTML][HTML] Advanced synchrotron radiation techniques for nanostructured materials

C Battocchio - Nanomaterials, 2019 - mdpi.com
Understanding the behavior of materials on all length scales, from the nanostructure up to
the macroscopic response, is a critical challenge for materials science. Modern analytical …