A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
Perovskite oxides are ABO3‐type compounds with a crystal structure capable of
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
Large-Area Crystalline BaSnO3 Membranes with High Electron Mobilities
We demonstrate the synthesis of the high-mobility transparent conducting oxide La-doped
BaSnO3 as freestanding nanomembranes. Membranes are fabricated by employing water …
BaSnO3 as freestanding nanomembranes. Membranes are fabricated by employing water …
High-κ SrTiO3 thin film as gate dielectric of a solution processed SnO2 thin film transistor
High dielectric constant (high-κ) gate insulating material is an essential component for low
operating voltage thin film transistor (TFT) fabrication. Among different high-κ materials, a …
operating voltage thin film transistor (TFT) fabrication. Among different high-κ materials, a …
High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface
A 2-dimensional electron gas (2DEG) system with high mobility was discovered at the
interface of two perovskite oxides: a polar orthorhombic perovskite LaScO3 and a nonpolar …
interface of two perovskite oxides: a polar orthorhombic perovskite LaScO3 and a nonpolar …
Comparative electronic structure, magnetic and optical properties of cubic perovskite BaXO3 (X= Ti, Sn) with self-defects: A first-principles calculation
In this work, a comparative analysis of the electronic structures and various optical
properties of perovskite BaTiO 3 and BaSnO 3 with self-defects was estimated via DFT …
properties of perovskite BaTiO 3 and BaSnO 3 with self-defects was estimated via DFT …
Conductive oxide interfaces for field effect devices
L Kornblum - Advanced Materials Interfaces, 2019 - Wiley Online Library
The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of
rich correlated‐electron physics, whose origins are still being debated 15 years later. In …
rich correlated‐electron physics, whose origins are still being debated 15 years later. In …
[HTML][HTML] Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon
La-doped BaSnO 3 has been epitaxially integrated with (001) Si using an SrTiO 3 buffer
layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO 3 buffer layer was …
layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO 3 buffer layer was …
Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial
The wide gap perovskite semiconductor BaSnO 3 has attracted much interest since the
discovery of room temperature electron mobility up to 320 cm 2 V− 1 s− 1 in bulk crystals …
discovery of room temperature electron mobility up to 320 cm 2 V− 1 s− 1 in bulk crystals …
[HTML][HTML] Fully transparent field-effect transistor with high drain current and on-off ratio
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO 3 channel layer
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …