Small‐signal analytical MOSFET model for microwave frequency applications
A small‐signal analytical MOSFET model suitable for microwave frequency applications is
presented. The effect of parasitic elements, the fringing‐field effect, and distributed‐gate …
presented. The effect of parasitic elements, the fringing‐field effect, and distributed‐gate …
A semi-empirical approach to analyze small geometry effects in LDD MOSFETs
E Kalra, A Kumar, S Haldar, RS Gupta - Microelectronic engineering, 2001 - Elsevier
A simple semi-empirical model for small geometry (short and narrow) lightly doped drain
MOSFET is developed and the expressions for threshold voltage, drain current …
MOSFET is developed and the expressions for threshold voltage, drain current …
A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs
R Saleem, C Thomas, S Haldar… - International journal of …, 1999 - Taylor & Francis
An improved two-dimensional analysis of non-uniformly doped enhancement-mode
MOSFETs is presented. The fringing field effect, a major constraint in miniaturization, is …
MOSFETs is presented. The fringing field effect, a major constraint in miniaturization, is …
[PDF][PDF] Substrate Effect Dependent Scattering Parameters Extraction and Small-Signal MOSFET Circuit Analysis for Microwave Frequency Applications
A GOSWAMI - 2000 - Citeseer
“Common sense is prejudice developed before the age of eighteen” were the words of
renowned scientist A. Einstein. The quote is in suitable place to begin the discussion on the …
renowned scientist A. Einstein. The quote is in suitable place to begin the discussion on the …
Flicker noise modelling of small geometry LDD MOSFETs
E Kalra, A Kumar, S Haldar, RS Gupta - Microelectronics journal, 2001 - Elsevier
An analytical 1/f noise model based on the evaluation of channel charge in small geometry
Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel …
Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel …
NOISE MODELLING OF SMALL GEOMETRY LIGHTLY DOPED DRAIN MOSFET
The high frequency noise of the small geometry LDD MOSFETS is evaluated. The analysis
includes the short channel, narrow width, LDD and DIBL effects. The model also includes …
includes the short channel, narrow width, LDD and DIBL effects. The model also includes …
Modelling of Hot Carrier Immunized Short Geometry LDD MOSFET Considering DIBL Effect Ekta Kalra, Anil Kumar, Subhasis Haldar¹ and RS Gupta Department of …
BJ Marg - National Symposium on Advances in Microwaves and …, 1998 - books.google.com
A semi empirical method is presented to predict the threshold voltage of short geometry LDD
MOSFETS. It is shown that the threshold voltage expression is simple and valid for all …
MOSFETS. It is shown that the threshold voltage expression is simple and valid for all …