Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …

With the commercial availability of SiC power devices, their acceptance is expected to grow
in consideration of the excellent low switching loss, high-temperature operation, and high …

This chapter presents recent advances in power semiconductors technology with special
attention on wide bandgap (WBG) transistors. A short introduction to the state‐of‐the‐art …

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in
the on-state. This base current is usually made constant and is corresponding to the …

In comparison to their Silicon (Si) counterparts, the Silicon Carbide (SiC) power transistors
have lower on-state resistance and higher switching speed, power and temperature ratings …

Transistors made of wide band‐gap materials such as silicon carbide (SiC) offer the
opportunity of much faster switching, and, hence, lower switching losses compared with …

After three years' work on this dissertation, it is the time to express my sincere gratitudes to
all the people who helped me, who worked together with me, who guided me, who always …

As one of the most attractive postsilicon power semiconductor devices, SiC bipolar junction
transistor (BJT) has been studied extensively and commercialized in the past few years …

This paper describes issues related to design, construction and experimental verification of
a 6 kW, 200 kHz boost converter (300 V/600 V) built with four parallel-connected SiC bipolar …

This study proposes a MHz gate driving solution for silicon carbide (SiC) metal oxide
semiconductor field effect transistor (MOSFET), which enables multiplication of the switching …