Emerging new applications of antiferroelectric perovskite oxides based on their fascinating
phase transformation between polar and nonpolar states have provided considerable …

Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …

Among currently available energy storage (ES) devices, dielectric capacitors are optimal
systems owing to their having the highest power density, high operating voltages, and a long …

The emergence of ferroelectric and antiferroelectric properties in the semiconductor
industry's most prominent high‐k dielectrics, HfO2 and ZrO2, is leading to technology …

HfO2-based films with high compatibility with Si and complementary metal-oxide
semiconductors (CMOS) have been widely explored in recent years. In addition to …

Ferroelectric thin film materials have been widely applied in a great many fields for their
robust spontaneous electric polarization and strong coupling with optical, electric and …

The unique nonlinear dielectric properties of antiferroelectric (AFE) oxides are promising for
advancements in solid state supercapacitor, actuator, and memory technologies. AFE …

In this letter, we demonstrate an effective way to enrich the performance of HfxZr1-x O2
(HZO) energy storage capacitors (ESCs) by inserting Al2O3 dielectric interlayer (DIL) in the …

HfO2 can assume different crystalline structures, such as monoclinic, orthorhombic, and
cubic polymorphs, each one characterized by unical properties. The peculiarities of this …

The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …