A highly CMOS compatible hafnia-based ferroelectric diode
Memory devices with high speed and high density are highly desired to address the
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …
Semiconductor-metal transition caused by increased surface charge in two-dimensional quintuple-layers Al2O3 materials
Abstract Two-dimensional (2D) quintuple-layer (QL) Al 2 O 3 with intrinsic out-of-plane
polarization exhibit many interesting physical properties. We systematically study the …
polarization exhibit many interesting physical properties. We systematically study the …
Holistic optimization of trap distribution for performance/reliability in 3-D NAND flash using machine learning
A machine learning (ML) method was used to optimize the trap distribution of the charge trap
nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics …
nitride (CTN) to simultaneously improve its performance/reliability (P/R) characteristics …
Investigation and modeling of Z-interference in poly-Si channel-based 3-D NAND flash memories
In this article, the Z-interference in 3-D charge trap nitride (CTN) NAND flash memory is
investigated using technology computer-aided design (TCAD) simulation. In 3-D CTN NAND …
investigated using technology computer-aided design (TCAD) simulation. In 3-D CTN NAND …
Origin of incremental step pulse programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash
Abstract We analyzed Incremental Step Pulse Programming (ISPP) slope degradation to
improve the program efficiency of 3D NAND Flash memory using both measurement and …
improve the program efficiency of 3D NAND Flash memory using both measurement and …
Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition
P Ma, W Guo, J Sun, J Gao, G Zhang… - Semiconductor …, 2019 - iopscience.iop.org
Abstract Alumina (Al 2 O 3) films of different thicknesses have been grown at different low
temperatures (100 C–250 C) by atomic–layer deposition on n–type Si substrate. The …
temperatures (100 C–250 C) by atomic–layer deposition on n–type Si substrate. The …
Influence of channel hole remaining ratio on hemi-cylindrical vertical NAND flash memory
The influence of the channel hole remaining ratio (CHRR) on the hemi-cylindrical (HC)
vertical NAND (VNAND) flash memory was investigated using both simulation and …
vertical NAND (VNAND) flash memory was investigated using both simulation and …
Inert ambient annealing effect on MANOS capacitor memory characteristics
N Nikolaou, P Dimitrakis, P Normand… - …, 2015 - iopscience.iop.org
In this work we report on the influence of nitrogen ambient thermal effects on the
performance of Pt/Al 2 O 3/Si 3 N 4/SiO 2/Si memory capacitors. Two post deposition …
performance of Pt/Al 2 O 3/Si 3 N 4/SiO 2/Si memory capacitors. Two post deposition …
Analysis and compact modeling of fast detrapping from bandgap-engineered tunneling oxide in 3-D NAND flash memories
M Kim, H Shin - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
We present the comprehensive analysis and the compact modeling methodology of fast
electron detrapping from the bandgap engineered tunneling oxide (BE-TOX) in 3-D NAND …
electron detrapping from the bandgap engineered tunneling oxide (BE-TOX) in 3-D NAND …
Influence of intercell trapped charge on vertical NAND flash memory
The influence of intercell trapped charge (ITC)—the charge trapped at the inter-cell nitride
regions by fringe electric fields during program and erase operations—on vertical NAND …
regions by fringe electric fields during program and erase operations—on vertical NAND …