In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

The plane-wave pseudopotential method is used to calculate structural properties for
wurtzite and zinc-blende AlN and InN using large plane-wave basis sets and treating the …

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …

III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

A series of calculations have been performed on group-III nitrides (GaN, AlN and InN) in
both zinc-blende and wurtzite structures. Three different levels of computation have been …

This review focuses on the fundamental properties of III–V compound semiconductors from a
theoretical or computational standpoint. Its purpose is to summarize the contributions of …

The electronic band structures of silicon and the zinc-blende-type III-N semiconductor
compounds BN, AlN, GaN, and InN are calculated by using the self-consistent full potential …