Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology
Many scientists are working to develop a static random-access memory (SRAM) cell that
used little power and has good stability and speed. This work introduces a fin field effect …
used little power and has good stability and speed. This work introduces a fin field effect …
A low power static noise margin enhanced reliable 8 T SRAM cell
This paper investigates a low leakage power 8 T (LP8T) SRAM cell with high read and write
stability. The proposed LP8T (PLP8T) SRAM cell has separate write and read bit lines. As an …
stability. The proposed LP8T (PLP8T) SRAM cell has separate write and read bit lines. As an …
A Highly Stable PNN-PPN-10T SRAM Cell With Improved Reliability
A new PNN-PPN 10T static random access memory (SRAM) cell is presented in this paper.
The proposed design aims to address stability of memory cell at worst-case analysis …
The proposed design aims to address stability of memory cell at worst-case analysis …
A low power feedback cutting 8T SRAM cell for improved stability
This paper presents a feed-back cutting 8T (FC8T) SRAM for stability enhancement and to
mitigate the power consumption. The design specifications such as noise margin, power …
mitigate the power consumption. The design specifications such as noise margin, power …
Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications
Biomedical applications like body area networks (BAN) necessitate the construction of
power optimized SRAMs to enhance the batteries life at BAN nodes. In this work, we have …
power optimized SRAMs to enhance the batteries life at BAN nodes. In this work, we have …
A Timing-Shared Adaptive Sensing Methodology for Low-Voltage SRAM
Y Zhou, Z Yang, Y Wei, X Lin, S Wu… - … on Circuits and …, 2024 - ieeexplore.ieee.org
Lowing static random access memory (SRAM) supply voltage could highly improve energy
efficiency, yet energy efficiency still not attains optimal point due to the constraint of the …
efficiency, yet energy efficiency still not attains optimal point due to the constraint of the …
9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage
C Jiang, J Wen, S Meng, K Fu, C Xia, H Chen… - Electronics …, 2024 - Wiley Online Library
With the development of processes and reduction of transistor size, transistor sensitivity to
voltage changes has increased. Traditional SRAM bit cells struggle to function properly at …
voltage changes has increased. Traditional SRAM bit cells struggle to function properly at …
A comparative review on leakage power minimization techniques in SRAM
The fast progression in technology and growing market for portable devices demand ultra-
low power dissipation for longer battery life. In the present-day context, electronic circuit …
low power dissipation for longer battery life. In the present-day context, electronic circuit …