Device improvements obtained from exploiting the dependence of physical characteristics of
silicon at low temperature are above and beyond those improvements obtained from the …

This paper presents a physics-based analytical model for the MOS transistor operating
continuously from room temperature down to liquid-helium temperature (4.2 K) from …

This paper presents an experimental investigation, compact modeling, and low-temperature
physics-based modeling of a commercial 28-nm bulk CMOS technology operating at …

This paper reports on a semi-empirical model of the mobility in the inversion layer of
enhancement-type MOSFET's operated at low temperatures. The n-channel model is based …

A vertical integration of indium gallium nitride/gallium nitride (InGaN/GaN)-based microlight-
emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor …

A 0.5-µm-channel CMOS design optimized for liquid-nitrogen temperature operation is
described. Thin gate oxide (12.5 nm) and dual polysilicon work functions (n+-poly gate for n …

Discussed is the use of the high-frequency split CV method to measure accurately the
effective mobility of the n-channel MOS transistor as a function of temperature, bulk charge …

Computation of the equilibrium electrostatic potential and energy band diagram of
semiconductor devices with nonuniform composition is considered. We first establish the …

Carrier mobilities and concentrations were measured for different p-and n-type silicon
materials in the temperature range 0.3–300 K. Simulations show that experimentally …

We have investigated the cross-sectional electric field and potential distribution of a cleaved
n+-InP/InGaAsP/p+-InP p–i–n laser diode using Kelvin probe force microscopy (KFM) with a …