[PDF][PDF] An iterative method for cauchy problems subject to the convection-diffusion equation

A Nachaoui - Adv. Math. Models Appl, 2023 - jomardpublishing.com
In this text, we presented the Nachaoui's iterative alternating method for solving the Cauchy
problem governed by the convection-diffusion equation. The method is an iterative algorithm …

An extended finite element method for the Nernst-Planck-Poisson equations

P Kumar, N Swaminathan, S Natarajan - Solid State Ionics, 2024 - Elsevier
Abstract The Nernst-Planck-Poisson (NPP) system of equations is used to study the ion
diffusion mechanism in materials, commonly used in storage batteries and solid oxide fuel …

[PDF][PDF] Weak solutions to Kirchhoff type problems via topological degree

S Yacini, C Allalou, K Hilal, A Kassidi - Adv. Math. Mod. Appl, 2021 - jomardpublishing.com
In this article, we study the existence of weak solutions to a nonlinear Dirichlet boundary
value problem with a Kirchhoff term. The Berkovits topological degree is applied to an …

An hybrid finite element method for a quasi-variational inequality modeling a semiconductor

A Nachaoui, M Nachaoui - RAIRO-Operations Research, 2023 - rairo-ro.org
A problem of determining the characteristics of a semiconductor can be reduced to the study
of the quasi-variational inequality,(J. Abouchabaka, R. Aboulaïch, A. Nachaoui and A …

Iterative solution of the drift-diffusion equations

A Nachaoui - Numerical Algorithms, 1999 - Springer
The drift-diffusion model can be described by a nonlinear Poisson equation for the
electrostatic potential coupled with a system of convection-reaction-diffusion equations for …

On the numerical solution of a free boundary identification problem

A Ellabib, A Nachaoui - Inverse Problems in Engineering, 2001 - Taylor & Francis
In this paper, we discuss an inverse problem of determining a part of the boundary of the
depletion region of semiconductor devices. The existence of the unique solution is proved …

Quasi‐variational inequality and shape optimization for solution of a free boundary problem

J Abouchabaka, R Aboulaich, A Nachaoui… - … international journal for …, 1999 - emerald.com
Electrical potentials in a junction field transistor can be calculated using a simplified model
based on a complete depletion assumption. This gives rise to a free boundary problem. We …

Adaptive finite element approximation for steady-state Poisson-Nernst-Planck equations

T Hao, M Ma, X Xu - Advances in Computational Mathematics, 2022 - Springer
In this paper, we develop an adaptive finite element method for the nonlinear steady-state
Poisson-Nernst-Planck equations, where the spatial adaptivity for geometrical singularities …

Sufficient Conditions for Converging Drift‐Diffusion Discrete Systems. Application to The Finite Element Method

A Nachaoui, NR Nassif - Mathematical methods in the applied …, 1996 - Wiley Online Library
In this paper we generalize the abstract results of Mock and Marcowich [13, 12] for
convergence of discrete Van Roosbroeck systems [12, 13, 17], to the case when the …

ON THE UNIQUENESS OF THE SOLUTION TO THE DRIFT—DIFFUSION MODEL IN SEMICONDUCTOR ANALYSIS

A Nachaoui, NR Nassif - … The international journal for computation and …, 1992 - emerald.com
This paper is concerned with the analysis of global uniqueness of the solution to the drift—
diffusion models, for stationary flow of charges carriers in semiconductor devices. Two …