In this paper, background describing THz monolithic integrated circuits using InP HEMT is
presented. This three-terminal transistor technology has been used to realize amplifiers …

In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A
packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a …

This paper gives an overview of measurement techniques used in the THz region of the
electromagnetic spectrum, from about 100 GHz to several THz. Currently available …

The electromagnetic design and characterization of a micromachined submillimeter-wave
on-wafer probe is presented. The mechanical design and fabrication of the probe is …

In this article, we present a new type of waveguide ground-signal-ground (GSG) probe for
millimeter-wave (mmWave) on-wafer measurements. The proposed design integrates a …

The mechanical design and characterization of a micromachined on-wafer probe scalable to
submillimeter-wave frequencies is presented. The design consists of a silicon …

Today, radio-frequency (RF) wafer probes play an important role in almost every step of the
RF products lifecycle: from technology development, model parameter extraction, design …

This paper presents a micromachined probe for on-wafer measurements of circuits in the
WR-1.0 waveguide band (0.75-1.1 THz). The probe shows a measured insertion loss of less …

This article presents a state-of-art review of on-wafer S-parameter characterization of THz
silicon transistors for compact modelling purpose. After, a brief review of calibration/de …

An improved micromachined on-wafer probe covering frequencies 500-750 GHz is
demonstrated in this paper to address sub-millimeter-wave integrated-circuit testing …