[HTML][HTML] Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
We present the science and technology roadmap for graphene, related two-dimensional
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …
crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts …
High frequency electric field induced nonlinear effects in graphene
MM Glazov, SD Ganichev - Physics Reports, 2014 - Elsevier
The nonlinear optical and optoelectronic properties of graphene with the emphasis on the
processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects …
processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects …
Standardization of surface potential measurements of graphene domains
We compare the three most commonly used scanning probe techniques to obtain a reliable
value of the work function in graphene domains of different thickness. The surface potential …
value of the work function in graphene domains of different thickness. The surface potential …
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions
R Ribeiro-Palau, F Lafont, J Brun-Picard… - Nature …, 2015 - nature.com
The quantum Hall effect provides a universal standard for electrical resistance that is
theoretically based on only the Planck constant h and the electron charge e. Currently, this …
theoretically based on only the Planck constant h and the electron charge e. Currently, this …
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
We present a new fabrication method for epitaxial graphene on SiC which enables the
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …
growth of ultra-smooth defect-and bilayer-free graphene sheets with an unprecedented …
Single-particle tunneling in doped graphene-insulator-graphene junctions
The characteristics of tunnel junctions formed between n-and p-doped graphene are
investigated theoretically. The single-particle tunnel current that flows between the two …
investigated theoretically. The single-particle tunnel current that flows between the two …
Anomalously strong pinning of the filling factor in epitaxial graphene
T Janssen, A Tzalenchuk, R Yakimova, S Kubatkin… - Physical Review B …, 2011 - APS
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-
terminated SiC. Uniquely to this system, the dominance of quantum over classical …
terminated SiC. Uniquely to this system, the dominance of quantum over classical …
Quantum Hall phase in graphene engineered by interfacial charge coupling
The quantum Hall effect can be substantially affected by interfacial coupling between the
host two-dimensional electron gases and the substrate, and has been predicted to give rise …
host two-dimensional electron gases and the substrate, and has been predicted to give rise …
The quantum Hall effect in the era of the new SI
AF Rigosi, RE Elmquist - Semiconductor science and technology, 2019 - iopscience.iop.org
The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the
foundation of the ohm while also expanding its territory into other SI derived units. The …
foundation of the ohm while also expanding its territory into other SI derived units. The …
[HTML][HTML] Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards
(QHRS), accurate to within 10− 9 in relative value, but operating at lower magnetic fields …
(QHRS), accurate to within 10− 9 in relative value, but operating at lower magnetic fields …