Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon… - Journal of applied …, 2006 - pubs.aip.org
Here a physically based channel mobility model has been developed to investigate the
temperature dependence of the field-effect mobility of 4 H-Si C metal-oxide-semiconductor …
temperature dependence of the field-effect mobility of 4 H-Si C metal-oxide-semiconductor …
An improved 4H-SiC trench-gate MOSFET with low ON-resistance and switching loss
In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-
effect transistors (UMOSFETs) structure with low ON-resistance (R ON) and switching …
effect transistors (UMOSFETs) structure with low ON-resistance (R ON) and switching …
Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region
The main goal of this paper is development of a new circuit-based silicon carbide (SiC)
DMOSFET model which physically represents the mechanism of current saturation in power …
DMOSFET model which physically represents the mechanism of current saturation in power …
A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
A Pérez-Tomás, P Godignon, N Mestres… - Microelectronic …, 2006 - Elsevier
Besides its favorable physical properties, high performant MOSFETs (metal-oxide–
semiconductor field-effect transistors) fabrication in silicon carbide (SiC) remains an open …
semiconductor field-effect transistors) fabrication in silicon carbide (SiC) remains an open …
Analysis of mobility for 4H-SiC N/P-channel MOSFETs up to 300° C
L Yang, Y Bai, C Li, H Chen, Z Han… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The–characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high
temperatures up to 300° C. Different scattering mechanisms of surface mobility for 4H-SiC N …
temperatures up to 300° C. Different scattering mechanisms of surface mobility for 4H-SiC N …
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
Lateral n-channel enhancement-mode GaN metal-oxide-semiconductor (MOS) field-effect
transistors and lateral capacitors have been fabricated on a p-type epi-GaN substrate …
transistors and lateral capacitors have been fabricated on a p-type epi-GaN substrate …
Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices
B Tian, F He, J Liu, X Huang, R Jin - Silicon, 2023 - Springer
Channel mobility modeling is of great significance for the development and analysis of SiC
MOS devices due to complex SiC/SiO2 interface. In the context of the physical …
MOS devices due to complex SiC/SiO2 interface. In the context of the physical …
High-frequency switching properties and low oxide electric field and energy loss in a reverse-channel 4H-SiC UMOSFET
Z Shen, F Zhang, G Yan, Z Wen, W Zhao… - … on Electron Devices, 2020 - ieeexplore.ieee.org
A reverse-channel 4H-SiC trench gate metaloxide-semiconductor field-effect transistor
(UMOSFET)(RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low …
(UMOSFET)(RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low …
Comparative evaluation of the short circuit capability of SiC planar and trench power MOSFET
L Cao, Q Guo, K Sheng - 2018 IEEE 2nd International …, 2018 - ieeexplore.ieee.org
In this paper, the short circuit robustness of SiC trench MOSFETs is analyzed and compared
with SiC planar MOSFETs. Thermal simulation during short circuit operations are studied in …
with SiC planar MOSFETs. Thermal simulation during short circuit operations are studied in …
Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events
The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …
especially under high voltage and high current conditions, such as in the short circuit events …