2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
Simulation study of dielectric modulated dual channel trench gate TFET-based biosensor
A dielectric modulated dual channel trench gate tunnel FET (DM-DCTGTFET) based
biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET …
biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET …
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by
efficient modulation of surface potential in transistors. While negative‐capacitance transition …
efficient modulation of surface potential in transistors. While negative‐capacitance transition …
InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors
Tunnel field-effect transistors with ability to operate well below the thermal limit (with a
demonstrated 43 mV/decade at VDS= 0.1 V) are characterized in this paper. Based on 88 …
demonstrated 43 mV/decade at VDS= 0.1 V) are characterized in this paper. Based on 88 …
Sub-10-nm diameter vertical nanowire p-type GaSb/InAsSb tunnel FETs
Y Shao, JA del Alamo - IEEE electron device letters, 2022 - ieeexplore.ieee.org
In this letter, we report the realization of sub-10-nm diameter vertical nanowire (VNW) p-type
tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top …
tunnel FETs (TFETs). Using a broken-band GaSb/InAsSb heterostructure design and a top …
Vertical gate-all-around nanowire GaSb-InAs core-shell n-type tunnel FETs
T Vasen, P Ramvall, A Afzalian, G Doornbos… - Scientific reports, 2019 - nature.com
Abstract Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates
for future low-power CMOS applications including mobile and Internet of Things (IoT) …
for future low-power CMOS applications including mobile and Internet of Things (IoT) …
Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade
We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-
effect transistors with channel diameter scaled down to 10 nm and ability to reach a point …
effect transistors with channel diameter scaled down to 10 nm and ability to reach a point …
A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON-and OFF-state current
A U-gate vertical tunneling field-effect transistor (TFET) of band-to-band tunneling (BTBT)
normal to the gate at low operation voltages is proposed and investigated by TCAD …
normal to the gate at low operation voltages is proposed and investigated by TCAD …