Review of silicon carbide processing for power MOSFET
C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - Crystals, 2022 - mdpi.com
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
Lateral β-Ga2O3 field effect transistors
Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
Liquid-metal-printed ultrathin oxides for atomically smooth 2D material heterostructures
Two-dimensional (2D) semiconductors are promising channel materials for continued
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …
Nanocavity-Mediated Purcell Enhancement of Er in TiO2 Thin Films Grown via Atomic Layer Deposition
The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state,
has widespread adoption as a dopant in telecommunication devices and shows promise as …
has widespread adoption as a dopant in telecommunication devices and shows promise as …
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
Flexible quintuple cation perovskite solar cells with high efficiency
B Cao, L Yang, S Jiang, H Lin, N Wang… - Journal of Materials …, 2019 - pubs.rsc.org
Flexible perovskite solar cells (PSCs) present the most promising photovoltaic technologies
due to their flexibility, light weight, and low temperature processing. However, their power …
due to their flexibility, light weight, and low temperature processing. However, their power …
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …
Construction of a β-Ga 2 O 3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications
Sensitive, high photoresponse and energy-saving detectors are urgently required to monitor
solar-blind UV signals. The impressive advantages of Ga2O3 in this field give rise to …
solar-blind UV signals. The impressive advantages of Ga2O3 in this field give rise to …