Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent
material properties. WBG devices are commercially available in discrete and module …

Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …

Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

Multichip SiC power modules with Kelvin-source connection are popular in applications with
large capacity and high switching frequency. However, dynamic current imbalance among …

The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …

The multichip power module is an irreplaceable component for high-capacity industrial
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …

Compact models of wide-bandgap power devices are necessary to analyze and evaluate
their impact on circuit and system performance. Part I reviewed compact models for silicon …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …

Thanks to the increasing availability of silicon carbide (SiC) metal oxide semiconductor field
effect transistors (MOSFETs) with outstanding static and dynamic performances, the number …

The dynamic current imbalance between paralleled SiC mosfet s can cause unbalanced
switching losses and limit the current capacity. It is essential to investigate the influences of …