Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping
D Tiwari, MV Yakushev, T Koehler… - ACS Applied Energy …, 2022 - ACS Publications
The sub-bandgap levels associated with defect states in Cu2ZnSnS4 (CZTS) thin films are
investigated by correlating the temperature dependence of the absorber photoluminescence …
investigated by correlating the temperature dependence of the absorber photoluminescence …
The development of room temperature LEDs and lasers for the mid‐infrared spectral range
A Krier, M Yin, V Smirnov, P Batty… - … status solidi (a), 2008 - Wiley Online Library
There are many applications for mid‐infrared light sources which has stimulated intensive
research into the physics and technology of narrow gap materials and devices. In this article …
research into the physics and technology of narrow gap materials and devices. In this article …
Photoluminescence study and observation of unusual optical transitions in Cu2ZnSnSe4/CdS/ZnO solar cells
In this paper, we examine photoluminescence spectra (PL) of Cu 2 ZnSnSe 4/CdS/ZnO solar
cells, based on an absorber layer fabricated by selenization of sputtered Cu, Zn, Sn …
cells, based on an absorber layer fabricated by selenization of sputtered Cu, Zn, Sn …
Influence of OLA and FA ligands on the optical and electronic properties of Cu2ZnSn (S, Se) 4 thin films and solar cells prepared from nanoparticle inks
The use of formamide (FA) as an alternative capping ligand to oleylamine (OLA) during the
preparation of Cu 2 ZnSnS 4 (CZTS) nanoparticle inks was investigated …
preparation of Cu 2 ZnSnS 4 (CZTS) nanoparticle inks was investigated …
Correlation between luminescence properties of AlxGa1− xAs∕ GaAs single quantum wells and barrier composition fluctuation
The luminescence mechanism at low temperatures in Al x Ga 1− x As∕ Ga As single
quantum wells grown by molecular-beam epitaxy with different aluminum concentrations in …
quantum wells grown by molecular-beam epitaxy with different aluminum concentrations in …
Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density
D Vignaud, DA Yarekha, JF Lampin… - Applied physics …, 2007 - pubs.aip.org
The electron lifetime has been measured by time-resolved differential transmission
experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on …
experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on …
[HTML][HTML] Photoluminescence properties of Te doped AlGaAsSb alloys
A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb
alloys lattice matched to InP is presented. Photoluminescent temperature and excitation …
alloys lattice matched to InP is presented. Photoluminescent temperature and excitation …
Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions
EM Kazaryan, AA Kostanyan… - Journal of Physics …, 2007 - iopscience.iop.org
Optical absorption related to donor–acceptor pair transitions in GaAs quantum wells was
theoretically investigated. The donor and acceptor ground state wavefunctions and energies …
theoretically investigated. The donor and acceptor ground state wavefunctions and energies …
Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes
A Krier, VM Smirnov, PJ Batty, VI Vasil'Ev… - Applied physics …, 2007 - pubs.aip.org
Room temperature electroluminescence in the midinfrared near 4 μ m is reported from
GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the …
GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the …
Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy
A Krier, VM Smirnov, PJ Batty, M Yin, KT Lai… - Applied Physics …, 2007 - pubs.aip.org
Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown
by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared …
by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared …