The sub-bandgap levels associated with defect states in Cu2ZnSnS4 (CZTS) thin films are
investigated by correlating the temperature dependence of the absorber photoluminescence …

There are many applications for mid‐infrared light sources which has stimulated intensive
research into the physics and technology of narrow gap materials and devices. In this article …

In this paper, we examine photoluminescence spectra (PL) of Cu 2 ZnSnSe 4/CdS/ZnO solar
cells, based on an absorber layer fabricated by selenization of sputtered Cu, Zn, Sn …

The use of formamide (FA) as an alternative capping ligand to oleylamine (OLA) during the
preparation of Cu 2 ZnSnS 4 (CZTS) nanoparticle inks was investigated …

The luminescence mechanism at low temperatures in Al x Ga 1− x As∕ Ga As single
quantum wells grown by molecular-beam epitaxy with different aluminum concentrations in …

The electron lifetime has been measured by time-resolved differential transmission
experiments in heavily carbon-doped p-type InGaAs and GaAsSb, grown lattice matched on …

A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb
alloys lattice matched to InP is presented. Photoluminescent temperature and excitation …

Optical absorption related to donor–acceptor pair transitions in GaAs quantum wells was
theoretically investigated. The donor and acceptor ground state wavefunctions and energies …

Room temperature electroluminescence in the midinfrared near 4 μ m is reported from
GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy. Comparison of the …

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown
by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared …