Bias-temperature instabilities (BTIs) are investigated for n-and p-substrate 4H-SiC metal–
oxide–semiconductor (MOS) capacitors. The midgap voltage (V_\rmmg) shifts positively …

For the first time, we have presented a novel nanoscale fully depleted silicon-on-insulator
metal-oxide-semiconductor field-effect transistor (SOI-MOSFET) with modified current …

This paper presents a new partially-depleted silicon-n-insulator (SOI) metal-oxide-
semiconductor field effect transistor in order to improve the reliability successfully. An …

In this paper, we present a novel nano-scale fully depleted silicon-on-insulator metal-oxide
semiconductor field-effect transistor (SOI MOSFET). On-state current increment, leakage …

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in
which N and P type columns (NPC) in the drift region are incorporated to improve the …

In this paper, we show how breakdown voltage (V BR) and the specific on-resistance (R on)
can be improved simply by controlling of the electric field in a power 4H-SiC UMOSFET. The …

Bias-temperature-instabilities (BTIs) are investigated for 4H-SiC based nMOSFETs before
and after total ionizing dose irradiation. We find that the threshold voltage shifts of …

We have investigated bias-temperature instabilities (BTIs) in 4H-SiC transistors and
capacitors under a range of stress conditions. The threshold voltage V TH of n MOS …

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect
transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and …

Power semiconductor switches are utilized in cars, trains, the power supply system,
industrial automation and many other fields. They allow to electrically connect and …