Strain-engineered topological phase transitions in ferrovalley monolayer

K Sheng, B Zhang, HK Yuan, ZY Wang - Physical Review B, 2022 - APS
Ferrovalley and topology are two basic concepts in both fundamental research fields and
emerging device applications. So far, reports are extremely scarce regarding the coupling of …

Theoretical evidence of the spin–valley coupling and valley polarization in two-dimensional MoSi 2 X 4 (X= N, P, and As)

H Ai, D Liu, J Geng, S Wang, KH Lo… - Physical Chemistry …, 2021 - pubs.rsc.org
Very recently, the centimeter-scale MoSi2N4 monolayer was synthesized experimentally
and exhibited a semiconducting nature with high mobility (Hong et al., Science, 2020, 369 …

[HTML][HTML] Anomalous valley Hall effect in antiferromagnetic monolayers

W Du, R Peng, Z He, Y Dai, B Huang… - npj 2D Materials and …, 2022 - nature.com
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of
condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D …

Ferroelastically controlled ferrovalley states in stacked bilayer systems with inversion symmetry

YK Zhang, JD Zheng, WY Tong, YF Zhao, YF Tan… - Physical Review B, 2023 - APS
Realizing and manipulating valley polarization is extremely important to valleytronics.
Ferrovalley materials with spontaneous valley polarization are excellent candidates for this …

Flexoelectric effect induced p–n homojunction in monolayer GeSe

JD Zheng, YF Zhao, ZQ Bao, YH Shen, Z Guan… - 2D …, 2022 - iopscience.iop.org
Recently, two-dimensional in-plane ferroelectric materials group-IV monochalcogenides MX
(M= Ge, Sn; X= S, Se) have attracted much attention due to their rich physical properties …

Magnetic proximity controlled Rashba and valley splittings in monolayer Janus ZrNX/VTe2 (X= Br, I) heterostructure

G Zheng, B Zhang, H Duan, W Zhou… - Physica E: Low …, 2023 - Elsevier
Due to the symmetry breaking, Janus two-dimensional materials possess novel electronic
properties such as energy valley and spin polarization. In this research, we predicted the …

Large valley polarization in a novel two-dimensional semiconductor H-ZrX2 (X= Cl, Br, I)

J Guo, Z Lu, K Wang, X Zhao, G Hu… - Journal of Physics …, 2021 - iopscience.iop.org
Inspired by the new progress in the research field of two-dimensional valleytronics materials,
we propose a new class of transition metal halides, ie H-ZrX 2 (X= Cl, Br, I), and investigated …

A first-principles investigation of structural, thermodynamic, electronic, and optical properties of doped 2D ZrNI monolayer

A Al Roman, H Adawi, A Barbary, MM Masud… - Materials Chemistry and …, 2024 - Elsevier
The density functional theory has been used to investigate the structural, thermodynamic,
electronic, and optical properties of two-dimensional (2D) ZrNI monolayers without and with …

[HTML][HTML] Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP 2 S 6 by magnetic doping: towards electron valley-polarized transport

D Zhang, B Zhou - RSC advances, 2022 - pubs.rsc.org
Two-dimensional valleytronic systems, using the valley index of carriers to perform logic
operations, serves as the basis of the next-generation information technologies. For efficient …

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

S Chai, Y Feng, Y Dai, B Huang, L Kou, Y Ma - Materials Horizons, 2024 - pubs.rsc.org
Control over and manipulation of valley physics via ferrovalleytricity is highly desirable for
advancing valleytronics. Current research focuses primarily on two-dimensional …