An aluminum-based hybrid film photoresist for advanced lithography by molecular layer deposition

X Wang, T Guo, Y Shan, O Zhang, H Dong… - Journal of Materials …, 2024 - pubs.rsc.org
In the realm of advanced integrated circuits, the demand for novel resist materials becomes
paramount as we progress toward smaller process nodes. Inorganic photoresists have …

Heteroepitaxy of Ge on Si (001) with pits and windows transferred from free-standing porous alumina mask

Y Huangfu, W Zhan, X Hong, X Fang, G Ding… - …, 2013 - iopscience.iop.org
This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

Restrictions of Si-based Ge nanodots from porous alumina membranes

W Zhan, Y Huangfu, G Ding, H Ye - Superlattices and Microstructures, 2013 - Elsevier
This paper reports growth of ordered Ge nanodots (NDs) with uniform sizes on silicon
substrates using porous alumina membranes (PAMs) as templates. The relationships …