This work establishes the relationship between the electron energy and the electron
concentration within the multiple quantum wells (MQWs) for AlGaN based deep ultraviolet …

The internal quantum efficiency (IQE) for InGaN/GaN light‐emitting diodes (LEDs) grown on
[0001] sapphire substrates is strongly affected by various factors including polarization effect …

In recent years, GaN materials have been applied to the field of optoelectronic devices due
to their excellent photoelectric properties, especially in the field of light-emitting diodes …

In this letter, we propose to enhance the hole injection efficiency by modulating the layer
resistivity in the n-AlGaN layer for 280 nm AlGaN based deep ultraviolet light-emitting diodes …

In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip
light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in …

In this paper, we model and investigate the carrier transport for the core-shell nanorod (NR)
structured green light-emitting diodes (LEDs) for which the InGaN/GaN multiple quantum …

A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-
like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the …

The photocatalysis property and photo-electro properties of the GaN/HfGe2N4
heterojunction are investigated, and the application prospects in the fields of photocatalysts …

A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-
like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the …

The III-nitride light-emitting diodes (LEDs) have popularly penetrated into the market of the
visible light communication, lighting, sensing, and display illumination. The electrons are …