Ultra-thin quantum wells, with their unique charge confinement effects, are essential in
enhancing the electronic and optical properties crucial for optoelectronic device …

This computational investigation delves into the electronic and optical attributes of
InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement …

During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …

This paper presents a thorough numerical investigation focused on optimizing the efficiency
of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials …

Defects and impurities within semiconductor materials pose significant challenges. This
investigation scrutinizes the response of a single dopant donor impurity located in …

InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of
optoelectronics, owing to its excellent physical properties. However, InGaN has various …

In this study, the influence of temperature and hydrostatic pressure on impurity states in In x
Ga1-x As/GaAs quantum wells (QWs) with different shapes, including square, parabolic, and …