A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors
Mixed-dimension van der Waals (vdW) p–n heterojunction photodiodes have inspired
worldwide efforts to combine the excellent properties of 2D materials and traditional …
worldwide efforts to combine the excellent properties of 2D materials and traditional …
Self-powered photodetector with low dark current based on the InSe/β-Ga 2 O 3 heterojunctions
YQ Wang, S Zhao, HY Xiao, JZ Wang, PA Hu… - Journal of Materials …, 2024 - pubs.rsc.org
Solar-blind photodetectors play an important role in many fields of solar-blind ultraviolet
(UV) photodetection such as missile tracking and fire warning. A high-performance self …
(UV) photodetection such as missile tracking and fire warning. A high-performance self …
Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
JF Sánchez-Royo, A Segura, O Lang… - Journal of Applied …, 2001 - pubs.aip.org
Indium selenide thin films have been grown on p-type gallium selenide single crystal
substrates by van der Waals epitaxy. The use of two crucibles in the growth process has …
substrates by van der Waals epitaxy. The use of two crucibles in the growth process has …
Photovoltaic performance of TCVA-InSe hybrid solar cells based on nanostructure films
SE Al Garni, AAA Darwish - Solar Energy Materials and Solar Cells, 2017 - Elsevier
Hybrid organic-inorganic solar cells of the configuration ITO/InSe/TCVA/Au have been
fabricated using thermal evaporation technique. The electrical transport mechanisms of the …
fabricated using thermal evaporation technique. The electrical transport mechanisms of the …
Structural and electrical properties of InSe polycrystalline films and diode fabrication
A Hirohata, JS Moodera, GP Berera - Thin Solid Films, 2006 - Elsevier
Polycrystalline InSe diode structures, which have been known as a phase-change material,
were studied for the first time where the current–voltage characteristics show high potential …
were studied for the first time where the current–voltage characteristics show high potential …
Optical properties of nanostructured InSe thin films
MM El-Nahass, ABA Saleh, AAA Darwish… - Optics …, 2012 - Elsevier
Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films
have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity …
have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity …
Indium selenide thin film preparation by sol–gel technique
Abstracts Preparation and characterization of In–Se compound thin films prepared by sol–
gel methods on glass substrate have been studied. X-ray diffraction analyses and optical …
gel methods on glass substrate have been studied. X-ray diffraction analyses and optical …
Metal− organic chemical vapor deposition of indium selenide thin films
Indium selenide (InSe) thin films have been grown at 230− 420° C by low-pressure metal−
organic chemical vapor deposition (MOCVD) using the single-source precursors [(t Bu) 2In …
organic chemical vapor deposition (MOCVD) using the single-source precursors [(t Bu) 2In …
Structural and electrical properties of boron doped InSe single crystals
H Ertap, M Karabulut - Materials Research Express, 2018 - iopscience.iop.org
Structural and electrical properties of undoped, 0.1%, 0.5% and 1.8% boron doped InSe
single crystals grown by modified Bridgman method have been studied by using XRD …
single crystals grown by modified Bridgman method have been studied by using XRD …
Space charge limited current, variable range hopping and mobility gap in thermally evaporated amorphous InSe thin films
C Viswanathan, S Gopal, M Thamilselvan… - Journal of Materials …, 2004 - Springer
We have analyzed the properties of as-deposited InSe thin films, deposited onto well
cleaned glass substrates under a vacuum of 10− 5 Torr, using X-ray diffraction, Rutherford …
cleaned glass substrates under a vacuum of 10− 5 Torr, using X-ray diffraction, Rutherford …