[PDF][PDF] 集成侧墙技术的80nm 栅GaN HEMT
孔欣 - Journal of terahertz science and electronic information …, 2024 - researching.cn
目前业界主要采用电子束曝光技术制作高频氮化镓高电子迁移率晶体管(GaN HEMT)
的深亚微米T 型栅, 存在效率低下, 良率不足和成本较高的问题. 本文采用集成侧墙技术, 在6 …
的深亚微米T 型栅, 存在效率低下, 良率不足和成本较高的问题. 本文采用集成侧墙技术, 在6 …
High Performance C-band Power Amplifier for CW and Pulsed Applications
FA Mughal, A Kahif, K Hayat… - 2022 19th International …, 2022 - ieeexplore.ieee.org
This paper demonstrates design, fabrication and measurements of GaN-HEMT based power
amplifier (PA) for pulsed radar applications. The purpose of this effort is to design and …
amplifier (PA) for pulsed radar applications. The purpose of this effort is to design and …