A review on GeTe thin film-based phase-change materials
Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …
which undergoes reversible transition between amorphous and crystalline phase when …
[HTML][HTML] Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride
KA Cooley, HM Aldosari, K Yang… - Journal of Vacuum …, 2020 - pubs.aip.org
Devices based on the unique phase transitions of phase change materials (PCMs) like
GeTe and Ge 2 Sb 2 Te 5 (GST) require low-resistance and thermally stable Ohmic contacts …
GeTe and Ge 2 Sb 2 Te 5 (GST) require low-resistance and thermally stable Ohmic contacts …
Understanding the crystallization behavior of surface-oxidized GeTe thin films for phase-change memory application
The outstanding properties of chalcogenide phase-change materials (PCMs) led to their
successful use in innovative resistive memory devices where the material is switched …
successful use in innovative resistive memory devices where the material is switched …
Pressure-induced first order phase transition in bulk GeSe
HL Kagdada, PK Jha, P Śpiewak… - Journal of Applied …, 2020 - pubs.aip.org
The phase transition mechanism in germanium selenide (GeSe) from the rhombohedral to
face-centered cubic (FCC) phase is extensively analysed using density functional theory …
face-centered cubic (FCC) phase is extensively analysed using density functional theory …
Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices
Phase-change random access memory is a promising approach to non-volatile memory.
However, the inability to secure consistent, reliable switching on a nanometre scale may …
However, the inability to secure consistent, reliable switching on a nanometre scale may …
[HTML][HTML] Reactivity in metal-Ge-Te systems: Thermodynamic predictions and experimental observations
KA Cooley, SE Mohney - Journal of Vacuum Science & Technology A, 2019 - pubs.aip.org
Thermal stability of neighboring layers in a thin film structure is critical to the device
endurance and reliability. The geometry of GeTe-based devices for radio frequency switches …
endurance and reliability. The geometry of GeTe-based devices for radio frequency switches …
The Effect of Metal Incorporation on Properties and Critical Interfaces in Germanium Telluride Based Devices
KA Cooley - 2020 - search.proquest.com
Phase change materials (PCMs) are well-known for their crystalline-to-amorphous
transitions that are both quick and reversible and offer a large contrast in electrical and …
transitions that are both quick and reversible and offer a large contrast in electrical and …