Roadmap for ferroelectric memory: Challenges and opportunities for imc applications
CMOS compatibility and the low process temperature of hafnium oxide (HfO 2) make HfO_2-
based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic …
based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic …
Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications
This article reports an improvement in the performance of the hafnium oxide-based (HfO2)
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
[HTML][HTML] 28 nm high-k-metal gate ferroelectric field effect transistors based synapses—A comprehensive overview
In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-
based ferroelectric field effect transistor devices for synaptic applications. The devices under …
based ferroelectric field effect transistor devices for synaptic applications. The devices under …
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being
vigorously investigated for being deployed in computing-in-memory (CIM) applications …
vigorously investigated for being deployed in computing-in-memory (CIM) applications …
1f-1t array: Current limiting transistor cascoded fefet memory array for variation tolerant vector-matrix multiplication operation
This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-
effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor …
effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor …
[HTML][HTML] SPICE compatible semi-empirical compact model for ferroelectric hysteresis
This paper reports a semi-empirical, SPICE compatible and computationally efficient
compact model for ferroelectric capacitors (Fe-CAP) description. This compact model is …
compact model for ferroelectric capacitors (Fe-CAP) description. This compact model is …
Interfacial layer engineering to enhance noise immunity of fefets for imc applications
This article reports an improvement in the low-frequency noise characteristics in hafnium
oxide-based (HfO 2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) …
oxide-based (HfO 2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) …
Low-power vertically stacked one time programmable multibit IGZO-based BEOL compatible ferroelectric TFT memory devices with lifelong retention for monolithic 3D …
This article demonstrates indium gallium zinc oxide-based onetime programmable
ferroelectric memory devices with multilevel coding and lifelong retention capability. The …
ferroelectric memory devices with multilevel coding and lifelong retention capability. The …