Simulation study of single-event burnout reliability for 1.7-kV 4H-SiC VDMOSFET
JH Luo, Y Wang, MT Bao, XJ Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A single-event burnout (SEB) reliability and hardening method for 1.7-kV 4H-SiC power
VDMOSFET under high liner energy transfer (LET) value range is proposed and researched …
VDMOSFET under high liner energy transfer (LET) value range is proposed and researched …
4H-SiC UMOSFET with an electric field modulation region below P-body
YZ Cheng, Y Wang, X Wu, F Cao - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we investigate a novel optimized 4H-SiC U-shaped trench-gate MOSFET
(UMOSFET) structure, which features an electric field modulation region below the P-body …
(UMOSFET) structure, which features an electric field modulation region below the P-body …
[PDF][PDF] Study of an n-MOSFET by Designing at 100 nm and Simulating using SIL V ACO ATLAS Simulator
MH Bhuyan, MT Islam - IOSR Journal of VLSI and Signal …, 2022 - researchgate.net
In this paper, the design steps of an n-MOSFET have been described and then the electrical
characterization of this MOSFET is simulated at 100 nm by using the SILVACO ATLAS …
characterization of this MOSFET is simulated at 100 nm by using the SILVACO ATLAS …
4H-SiC Trench-Gate MOSFET with a Step-Shaped Deep P+ Source Area and an Extra n-Type Shielding Area
L Jiang, Z Dong, C Zeng, S Dong, Y Sun… - 2023 20th China …, 2023 - ieeexplore.ieee.org
This paper brought up a novel 4H-SiC U-shaped trench-gate MOSFET to increase the
devices' performance. The new-structured device featured a step-shaped bottom corner in …
devices' performance. The new-structured device featured a step-shaped bottom corner in …