Thin films of InSe were prepared by thermal evaporation technique under a vacuum of 10− 4
Pa. The effect of γ-irradiation on the structure, and the optical parameters were investigated …

Abstract Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor
transport method. The grown crystals were characterized by estimating their surface …

The transport properties of indium selenide (InSe) along the layers have been widely
investigated in the past years [1, 2]. The near band–edge optical and electrical properties of …

Highly oriented indium selenide (InSe) thin films were prepared by sequential thermal
evaporation on tungsten (W) substrate and subsequently annealed at 300° C for 30 min in …

Abstract Polycrystalline Cd doped InSe thin films were obtained by thermal co‐evaporation
of alpha‐In2Se3 lumps and Cd onto glass substrates at a temperature of 150° C. The films …

Abstract In 1-x Mn x Se thin films prepared by thermal evaporation technique. The effect of γ-
irradiation on the optical and the electrical properties were studied. The optical parameters …

Indium selenide thin films were deposited onto glass substrates kept at 150° C by thermal
evaporation of α-In 2 Se 3. Some of the films were annealed at 150° C and 200° C and they …

GaSe thin films were deposited onto the glass substrates kept at 200° and 300° C by the
thermal evaporation of GaSe crystals under the pressure of 10− 5 Torr. X-ray analysis of the …

Indium selenide (InSe) is one of the important III-VI layered compounds which has a low
density of dangling bonds [1][A dangling bond occurs when an atom is missing a neighbor to …

Abstract Indium Selenide (In x Se 1-x) thin films were synthesized in a sealed ampoule in a
vacuum of 10-2 Torr using high purity elemental indium and selenium with different x …