A review of tunnel field-effect transistors for improved ON-state behaviour
KRN Karthik, CK Pandey - Silicon, 2023 - Springer
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …
possibly replace the traditional MOSFET from current IC technology. It has gained much …
Tunnel field-effect transistor with an L-shaped gate
Z Yang - IEEE electron device letters, 2016 - ieeexplore.ieee.org
In this letter, a new L-shaped gate tunnel field-effect transistor (LG-TFET) is proposed and
investigated by Silvaco Atlas simulation. The tunneling junction in the LG-TFET is …
investigated by Silvaco Atlas simulation. The tunneling junction in the LG-TFET is …
Design of high performance Si/SiGe heterojunction tunneling FETs with a T-shaped gate
W Li, H Liu, S Wang, S Chen, Z Yang - Nanoscale research letters, 2017 - Springer
In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped
gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source …
gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source …
Analog/RF performance of T-shape gate dual-source tunnel field-effect transistor
S Chen, H Liu, S Wang, W Li, X Wang… - Nanoscale research letters, 2018 - Springer
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor
(TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the …
(TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the …
Temperature dependence of analog performance, linearity, and harmonic distortion for a ge-source tunnel FET
E Datta, A Chattopadhyay, A Mallik… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we report an investigation of the effects of variation in temperature in the range
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
K Vanlalawmpuia, P Ghosh - AEU-International Journal of Electronics and …, 2023 - Elsevier
The paper presents a dielectrically modulated negative capacitance Germanium source
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
A high performance gate engineered charge plasma based tunnel field effect transistor
In this paper, we propose a new gate engineered dopingless tunnel field effect transistor
(GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to …
(GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to …
Gate drain-overlapped-asymmetric gate dielectric-GAA-TFET: a solution for suppressed ambipolarity and enhanced ON state behavior
The goal of this work is to overcome the major impediments of tunnel FET such as the
inherent ambipolar current (I AMB) and the lower ON current (I ON). To suppress the I AMB …
inherent ambipolar current (I AMB) and the lower ON current (I ON). To suppress the I AMB …
Impact of a pocket doping on the device performance of a Schottky tunneling field-effect transistor
S Guin, A Chattopadhyay, A Karmakar… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
It is known that a pocket at the drain end of a Schottky barrier tunneling FET (SB-TFET) helps
to improve the device performance in terms of greatly suppressed ambipolar current and …
to improve the device performance in terms of greatly suppressed ambipolar current and …
Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique
This paper presents a dual dielectric gate-gate overlap hetero-structure junctionless tunnel
field effect transistor (DDG-GOHJLTFET), in which first time, a combined effort of the band …
field effect transistor (DDG-GOHJLTFET), in which first time, a combined effort of the band …