Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm
The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …
Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional …
H Zhang, F Liang, L Yang, Z Gao, K Liang… - Advanced …, 2024 - Wiley Online Library
High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …
recognition and processing of optical information. To fulfill massive and complex imaging …
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
MA Khan, N Maeda, J Yun, M Jo, Y Yamada… - Scientific reports, 2022 - nature.com
Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN)
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
The road ahead for ultrawide bandgap solar-blind UV photodetectors
A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
In this work, we investigated the temperature-dependent photodetection behavior of a high-
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm …
2023 astrophotonics roadmap: pathways to realizing multi-functional integrated astrophotonic instruments
N Jovanovic, P Gatkine, N Anugu… - Journal of Physics …, 2023 - iopscience.iop.org
Photonic technologies offer numerous functionalities that can be used to realize
astrophotonic instruments. The most spectacular example to date is the ESO Gravity …
astrophotonic instruments. The most spectacular example to date is the ESO Gravity …
Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall
In this Letter, we perform a comprehensive investigation on the optical characterization of
micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting …
micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting …