In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

By utilizing the dual-spacer (DS) technique, a novel structure has been proposed to improve
the thermal characteristics and ON-current (in gate-all-around (GAA) MOSFETs. The …

In this article, a reliable drain-extended (De) fin-shaped field-effect transistor (DeFinFET)
with improved thermal performance and electrical performance is proposed for high-voltage …

In the deep submicron regime, FinFET successfully suppresses the leakage current using a
3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate …

Current–voltage characteristic curves of NFinFET are presented and fitted with modified
current–voltage (IV) formulas, where the modified term in the triode region is demonstrated …

This study focuses on the design and analysis of Junctionless (JL) NSFETs, with an
emphasis on the influence of spacer materials and temperature variations. A different …

For improving thermal characteristics and on-current () in vertically stacked nanosheet field-
effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …

FinFET transistors with fin channel lengths of 160 nm and 2000 nm and a planar MOSFET
transistor with channel lengths of 180 nm and 90 nm are presented with characteristic …

So far, various state‐of‐art techniques have been widely addressed to design ultra‐low
power semiconductors. Doping technique (TFET, junctionless transistor), oxide material …

In semiconductor manufacturing, one of the most important processes is wafer fabrication
and wafer cleaning. Even if a wafer appears free of scratches to the naked eye, there are …