Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT

Rf/analog and linearity performance of field-plate engineered AlN/-Ga2O3 MOSHEMT for high power and microwave applications

M Chauhan, K Jena, R Tomar, AN Khan - Microsystem Technologies, 2024 - Springer
This work introduces a novel AlN/β-Ga2O3 MOSHEMT design incorporating a field plate for
enhanced power switching applications. The study investigates the impact of varying field …
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