Terahertz band communication systems: Challenges, novelties and standardization efforts
Wireless data rates are expected to be around 10Gbps or even more within the upcoming
decade. The realization of such high data rates is unlikely with the currently licensed bands …
decade. The realization of such high data rates is unlikely with the currently licensed bands …
Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate
MH Eissa, A Malignaggi, R Wang… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
In this paper, a fully integrated wideband 240-GHz transceiver front-end, supporting BPSK
modulation scheme, with on-chip antenna is demonstrated in SiGe: C BiCMOS technology …
modulation scheme, with on-chip antenna is demonstrated in SiGe: C BiCMOS technology …
A low-power SiGe BiCMOS 190-GHz transceiver chipset with demonstrated data rates up to 50 Gbit/s using on-chip antennas
This paper presents a 190-GHz direct conversion transceiver (TRX) chipset with on-chip
antennas implemented in a 130-nm SiGe BiCMOS technology for short-distance high-data …
antennas implemented in a 130-nm SiGe BiCMOS technology for short-distance high-data …
Architecture and advanced electronics pathways toward highly adaptive energy-efficient computing
With the explosion of the number of compute nodes, the bottleneck of future computing
systems lies in the network architecture connecting the nodes. Addressing the bottleneck …
systems lies in the network architecture connecting the nodes. Addressing the bottleneck …
3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
Nanosensor networks for smart health care
Advent of nanoscale sensors has paved the way for countless applications envisioned in the
concept of a Smart City. In this chapter, we are focusing on one of the most fundamental …
concept of a Smart City. In this chapter, we are focusing on one of the most fundamental …
Analysis and design of D-band cascode SiGe BiCMOS amplifiers with gain-bandwidth product enhanced by load reflection
Emerging applications in D-band (110–170GHz) demand amplifiers with high gain-
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
A 230-GHz SiGe amplifier with 21.8-dB gain and 3-dBm output power for sub-THz receivers
H Li, J Chen, D Hou, Z Li, P Zhou… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents a 230-GHz high-gain amplifier implemented in a 0.13-μm SiGe BiCMOS
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
A broadband zero-IF down-conversion mixer in 130 nm SiGe BiCMOS for beyond 5G communication systems in D-band
T Maiwald, J Potschka, K Kolb, M Dietz… - … on Circuits and …, 2021 - ieeexplore.ieee.org
This brief presents a broadband D-band down-conversion mixer in a cost efficient 130nm
SiGe BiCMOS technology with af t/f max of 250/370GHz from Infineon Technologies AG. The …
SiGe BiCMOS technology with af t/f max of 250/370GHz from Infineon Technologies AG. The …
A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz
This work presents a low noise amplifier with variable gain, large bandwidth and a tunable
output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is …
output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is …