Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

A Manchon, J Železný, IM Miron, T Jungwirth… - Reviews of Modern …, 2019 - APS
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

Domain wall memory: Physics, materials, and devices

D Kumar, T Jin, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022 - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

Symmetry and magnitude of spin–orbit torques in ferromagnetic heterostructures

K Garello, IM Miron, CO Avci, F Freimuth… - Nature …, 2013 - nature.com
Recent demonstrations of magnetization switching induced by in-plane current injection in
heavy metal/ferromagnetic heterostructures have drawn increasing attention to spin torques …

Layer thickness dependence of the current-induced effective field vector in Ta| CoFeB| MgO

J Kim, J Sinha, M Hayashi, M Yamanouchi, S Fukami… - Nature materials, 2013 - nature.com
Current-induced effective magnetic fields can provide efficient ways of electrically
manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as …

Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

I Mihai Miron, G Gaudin, S Auffret, B Rodmacq… - Nature materials, 2010 - nature.com
Methods to manipulate the magnetization of ferromagnets by means of local electric fields,,
or current-induced spin transfer torque,, allow the design of integrated spintronic devices …

Fast current-induced domain-wall motion controlled by the Rashba effect

IM Miron, T Moore, H Szambolics… - Nature materials, 2011 - nature.com
The propagation of magnetic domain walls induced by spin-polarized currents,,,, has
launched new concepts for memory and logic devices,,. A wave of studies focusing on …

Rashba effect in functional spintronic devices

HC Koo, SB Kim, H Kim, TE Park, JW Choi… - Advanced …, 2020 - Wiley Online Library
Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

KS Lee, SW Lee, BC Min, KJ Lee - Applied Physics Letters, 2013 - pubs.aip.org
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane
charge current due to the spin Hall effect. We find that in the high damping regime, the …

Antiferromagnetic domain wall motion driven by spin-orbit torques

T Shiino, S Oh, PM Haney, S Lee, G Go, BG Park… - Physical review …, 2016 - APS
We theoretically investigate the dynamics of antiferromagnetic domain walls driven by spin-
orbit torques in antiferromagnet–heavy-metal bilayers. We show that spin-orbit torques drive …

Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion

AV Khvalkovskiy, V Cros, D Apalkov, V Nikitin… - Physical Review B …, 2013 - APS
In our numerical study, we identify the best conditions for efficient domain-wall motion by
spin-orbit torques originating from the spin Hall effect or Rashba effect. We demonstrate that …