ZnO microrods were grown by laser assisted flow deposition technique in order to study their
luminescence behaviour in the near band edge spectral region. Transmission electron …

The structure of the electronic energy levels of a single phase Cu 2 ZnSnS 4 film, as
confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence …

We report the linear and nonlinear optical properties of single GaAs nanowires with
polytypism effect. Electron transmission microscopy experiments show that the nanowires …

The amalgamation of high-strained core/shell geometries in nanowire (NW) heterostructures
with bandgap engineering enables the systems with novel transport and optical properties …

In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111) B by
molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations …

Crystal-phase control and crystalline quality improvement of GaAs nanowires (NWs) have
been realized by dopant (Be) incorporation in GaAs NWs. We demonstrate the improvement …

The intentional introduction of impurities in semiconductor nanowires is very important in
view of device applications. Doping affects the electronic energy level structure which in the …

Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-
pretreated Si (111) substrates under different As 4/Ga flux ratios (V/III ratios). It has been …

We present an original study on quaternary GaAsSbN layers and multilayer heterostructures
grown by low-temperature liquid-phase epitaxy (LPE) on GaAs substrates aiming to explore …

The electrical transport properties of individual Mg doped GaAs nanowires are investigated.
It is shown that Mg can be successfully used as a nontoxic p‐type dopant in GaAs …