A journey from bulk MOSFET to 3 nm and beyond
A Samal, SL Tripathi, SK Mohapatra - Transactions on Electrical and …, 2020 - Springer
To overcome scaling issues such as controlling gate leakage, drain induced barrier
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances
The incubation of strained nano-system in the form of tri-layered structure as nanowire
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
[PDF][PDF] Advanced MOSFET Technologies for Next Generation Communication Systems-Perspective and Challenges: A Review.
H Sood, VM Srivastava, G Singh - Journal of Engineering Science & …, 2018 - academia.edu
In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …
Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications
R Khan, NU Rehman, S Iqbal, S Abdullaev… - ACS Applied …, 2023 - ACS Publications
Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …
devices are being investigated for data storage and data-driven computation. Resistive …
Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical …
This study is a numerical simulation obtained by using Silvaco Atlas software to investigate
the effect of different types of dielectric layers, inserted between the channel and the gate, on …
the effect of different types of dielectric layers, inserted between the channel and the gate, on …
A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications
S Darwin, TS Arun Samuel - silicon, 2020 - Springer
The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing,
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Drain current modelling of asymmetric junctionless dual material double gate MOSFET with high K gate stack for analog and RF performance
This paper presents the continuous 2D analytical modelling of electrostatic potential,
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
Physics based analytical modeling and simulation of Cylindrical Junctionless Nanowire Ferroelectric field effect transistor (CJNFe-FET) for enhanced analog …
An analytical model has been examined in this work for dielectric engineered gate stack
high K cylindrical junctionless nanowire ferrolectric field effect transistor (HCJNFe FET) …
high K cylindrical junctionless nanowire ferrolectric field effect transistor (HCJNFe FET) …
Development of tri‐layered s‐Si/s‐SiGe/s‐Si channel heterostructure‐on‐insulator MOSFET for enhanced drive current
L Khiangte, RS Dhar - physica status solidi (b), 2018 - Wiley Online Library
Incubation of strain technology in the Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) arena by developing heterostructure layers combined of Si and SiGe layers …
(MOSFET) arena by developing heterostructure layers combined of Si and SiGe layers …
Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate …
M Kansal, SC Sharma - Silicon, 2022 - Springer
This work demonstrates the simulation analysis of a novel device Plasma-Assisted Dual-
Material Stacked Gate-Oxide Carbon Nanotube Field Effect Transistor (DM-SGCNFET) with …
Material Stacked Gate-Oxide Carbon Nanotube Field Effect Transistor (DM-SGCNFET) with …