Current emission stability is one of the key issues for field emitters for them to be practically
applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC …

This chapter briefly summarizes device-relevant material properties of the wide bandgap
semiconductor silicon carbide. The polytypes 4 H-, 6 H-and 3 C-SiC are predominantly …

Fine powders (∼ 0.7 μm) of SiC doped with 3mol% and 10mol% B were successfully
produced by mechanical activation assisted self-propagating high-temperature synthesis …

Field emission with a low turn-on field and high stability is very important and highly desired
for the practical application of nanostructures in electron emitters. In the present study, we …

The interstitial and vacancy mediated boron diffusion in silicon carbide is investigated with
an ab initio method. The boron interstitials in p-type and n-type materials are found to be far …

Cubic silicon carbide (3C-SiC) ceramics are one of the most promising candidates for
structural materials in future fusion reactors. In a fusion environment, irradiation of high …

As a semiconductor with a wide bandgap, 4H silicon carbide (4H-SiC) has considerable
potential for high-temperature and high-power devices. It is widely established that p-type …

We have performed a theoretical ab initio study of the B and N impurities in hydrogen-
passivated SiC nanowires (NWs). The calculations were performed within the density …

We systematically investigated the core-level X-ray photoelectron spectroscopy (XPS)
binding energy shifts of B 1s and Al 2p and formation energies for defects including boron …

Abstract 3C-SiC is a promising candidate for structural material of nuclear fusion reactors,
and H, T, and D irradiation often causes undesired volume swelling, bubble formation, and …