Analytical Model for the SOI Lateral Power Device With Step Width Technique and High- Dielectric
J Yao, Y Guo, K Yang, L Du, J Zhang… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
An analytical model is proposed in this paper for optimizing the breakdown voltage (BV) and
drift region doping concentration of a silicon-on-insulator (SOI) lateral power device with …
drift region doping concentration of a silicon-on-insulator (SOI) lateral power device with …
Analysis and Design of high-K Material Nanowire Transistor for Improved Performance
M Bassi, SL Tripathi, S Verma - 2019 IEEE 10th Annual …, 2019 - ieeexplore.ieee.org
MOSFET is not meeting the expectations of industry due to its high power consumption and
dissipation, high leakage current. Due to various challenges faced while further scaling of …
dissipation, high leakage current. Due to various challenges faced while further scaling of …
The parasitic capacitance considerations of metal interconnects in sub 10 nm era
Q Wu - Journal of Physics: Conference Series, 2024 - iopscience.iop.org
With the development of the integrated circuit industry and semiconductor technology, we
have entered the sub-10 nanometers era, which means the distance between adjacent …
have entered the sub-10 nanometers era, which means the distance between adjacent …
[HTML][HTML] Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved …
This paper proposes a novel cylindrical double gate In 0.53 Ga 0.47 As vertical Nanowire n
type device, which offers a higher drive current, better channel potential controllability and …
type device, which offers a higher drive current, better channel potential controllability and …
Quantum effect in Nanoscale SOI FINFET device structure: A simulation study
With CMOS technology reaching its scale minima, possibilities of implementing different
MOS device variants is being successfully explored by the VLSI design engineers. One of …
MOS device variants is being successfully explored by the VLSI design engineers. One of …