Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Quantum dots in silicon are promising candidates for the implementation of solid-state
quantum information processing. It is important to understand the effects of the multiple …

The dependence of the g factors of semiconductor donors on applied electric and magnetic
fields is of immense importance in spin-based quantum computation and in semiconductor …

The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing;
however, their quantum properties and controllability are sensitive to details such as the …

Quantum dots patterned by atomically precise placement of phosphorus donors in single
crystal silicon have long spin lifetimes, advantages in addressability, large exchange …

We present atomistic simulations of the D 0 to D− charging energies of a gated donor in
silicon as a function of applied fields and donor depths and find good agreement with …

The two-electron states and exchange couplings are investigated for a phosphorous donor
pair in silicon using an atomistic full configuration interaction method for donor separations …

Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the
hyperfine coupling for a single arsenic (As) donor in silicon (Si). The role of the central-cell …

The simulation of realistic device models in quantum transport requires an extreme amount
of memory and computation time. The computational burden in quantum transport is caused …