Nanosecond pulsed laser etching anti-reflective gratings and synchronous laser annealing for performance optimization of Ag/AZO thin films
B Li, H Zhang, J Ruan, L Wang, Z Wang, L Huang - Ceramics International, 2024 - Elsevier
Nanosecond pulsed laser etching for fabricating anti-reflective gratings and inducing
synchronous laser annealing was performed on Ag/AZO films. The optimum grating pitch …
synchronous laser annealing was performed on Ag/AZO films. The optimum grating pitch …
Role of interface engineering in amorphous InGaZnO ETL for non-fullerene organic solar cells
Amorphous metal-oxide semiconductors have been developed as prospective substitutes
for organic and silicon compounds, and their applications have been expanded due to their …
for organic and silicon compounds, and their applications have been expanded due to their …
Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target
Y Zhang, J Chen, B Sun, S Liu, Z Wang, S Liu… - Journal of Central South …, 2022 - Springer
In this study, a high-purity In2Ga2ZnO7 ceramic target was used to deposit indium gallium
zinc oxide (IGZO) films by RF magnetron sputtering technology. The microstructure, growth …
zinc oxide (IGZO) films by RF magnetron sputtering technology. The microstructure, growth …
Influence of annealing temperature on the optoelectronic properties of ITZO thin films
A Ding, R You, S Luo, J Gong, S Song, K Wang… - …, 2021 - iopscience.iop.org
In this work, the electrical conductivity and optical transparency of the In–Sn–Zn–O (ITZO)
films annealed at different temperatures were investigated. The results show that the ITZO …
films annealed at different temperatures were investigated. The results show that the ITZO …
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion …
Write-once-read-many-times (WORM) memory characteristics with a large memory window
are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide …
are demonstrated in a thin-film transistor (TFT) composed of an indium-gallium-zinc oxide …
Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects
Four specimen patterns with the microstructure of a microcopper wire are deposited on the
Si-wafer substrate plus thermal oxide (SiO 2) film as the top layer. Each pattern was …
Si-wafer substrate plus thermal oxide (SiO 2) film as the top layer. Each pattern was …